15N120 IGBT 1200V 15A
- Collector-Emitter Voltage, VCES:Â 1200V
- Gate-Emitter Voltage, VGES: ±20V
- Collector Current ICÂ (@ TCÂ = 250C):Â 30A
- Saturation Voltage: VCE(sat), typ:Â 1.9 V
- Package:Â TO-3P
- 1200 V, 15 A NPT Trench IGBT
- NPT Trench Technology, Positive temperature coefficient
- Extremely Enhanced Avalanche Capability
- Low Saturation Voltage
15N60 IGBT 600V 15A
20N60 Field Stop IGBT 600V 20A
30N60 IGBT 600V 30A
- Collector-emitter voltage VCE = 600V
- Collector current = 30A
- Collector-emitter saturation voltage, VCEsat (@TVJ=250C) =2.1 V
- Package : TO-247-3-21
- Short circuit withstand time: 10 µs
- 75% lower Eoff compared to previous generation combined with low conduction losses
- Pb-free lead plating; RoHS compliant
