20N60 Mosfet Transistor Small 600V 20A
2N2219 NPN Switching Transistor 60V 0.8A
2N2222A NPN Plastic Transistor 75V 0.6A
2N2646 UJT
- Available as “HR” (high reliability)
- Available as non-RoHS (Sn/Pb plating)
- Low emitter reverse current: 0.005µA (Typ)
- PASSIVATED surface for reliability and uniformity
- Maximum voltage between two bases (VB2B1): 35V
- Maximum emitter reverse voltage (VB2E): 30V
- Maximum RMS emitter current (Ie): 50mA
- Maximum peak emitter current (Ie): 2A
- Operating temperature range: -65ºC to +150ºC
- Maximum power dissipation : 300mW
2N2904A PNP Transistor 60V 0.6A
2N3055 NPN Power Transistor 100V 15A
2N3773 NPN Power Transistor 160V 16A
2N3866 NPN High Frequency Transistor 55V 0.4A
- Type Designator: 2N3866
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 5 W
- Maximum Collector-Base Voltage |Vcb|: 55 V
- Maximum Collector-Emitter Voltage |Vce|: 30
- Maximum Emitter-Base Voltage |Veb|: 3
- Maximum Collector Current |Ic max|: 0.4 A
- Max. Operating Junction Temperature (Tj): 200 °C
- Transition Frequency (ft): 500 MHz
- Collector Capacitance (Cc): 3 p
- Forward Current Transfer Ratio (hFE), MIN: 10
- Total Power Dissipation: 5W
- Transition Frequency: 500MHz
- Package: T0-39
2N3904 NPN Transistor 60V 0.2A
2N3906 PNP Transistor 40V 0.2A
2N5298 NPN Transistor 80V 4A
- Collector-base Voltage: 80V
- Collector Current: 4A
- Transistor Polarity: NPN
- Total Power Dissipation: 36W
- Current Gain min.: 20
- Transition Frequency: 800kHz
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
- High power and current handling capability
- Package: T0-220
2N5401 PNP Transistor 160V 0.6A
2N5777 NPN Photo Detector 40V 250mA
2N6107 PNP Transistor 80V 7A
2N6110 PNP Transistor 40V 7A
2N6124 PNP Transistor 45V 4A
2N6288 NPN Transistor 40V 7A
2N7000 N-Channel Mosfet Transistor 60V 200mA
2SC2625 NPN Transistor 450V 10A
2SC3281 NPN Transistor 200V 15A
2SC5589 NPN Transistor 1500V 18A
- Type Designator: 2SC5589
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 200 W
- Maximum Collector-Base Voltage |Vcb|: 1500 V
- Maximum Collector-Emitter Voltage |Vce|: 750 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 18 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 2 MHz
- Collector Capacitance (Cc): 240 pF
- Forward Current Transfer Ratio (hFE), MIN: 5
- Package: 2-21F2A
5N90 N-Channel Mosfet Transistor 900V 3A
BC107 NPN Transistor 50V 0.1A
BC108 NPN Transistor 30V 0.1A
BC109 NPN Transistor 30V 0.1A
- Model: BC109
- Type: bipolar
- Polarity: NPN
- Operating frequency: 100 MHz
- Collector-emitter voltage max: 20 V
- Emitter-base voltage max: 5 V
- Collector-base voltage max: 30 V
- Continuous collector current: 0.1 A
- Collector cut-off current: 15 nA
- Power: 0.3 W
- Maximum operating temperature: 150°C
- Case: TO-18
- Mounting: THT, PCB
BC177 PNP Transistor 50V 0.1A
BC327 PNP Transistor -50V -800mA
- VCBO Collector-Base Voltage (IE=0) : -50 V
- VCEO Collector-Emitter Voltage (IB=0) : -45 V
- VEBO Emitter-Base Voltage (IC=0) : -5 V
- IC Collector Current : -0.5 A
- ICM Collector Peak Current : -1 A
- Ptot Total Dissipation at TC = 25oC : 625 mW
- Tstg Storage Temperature : -65 to 150 oC
- Tj Max. Operating Junction Temperature : 150 oC
- Rthj-amb Thermal Resistance Junction-Ambient Max : 200 oC/W
- Rthj-case Thermal Resistance Junction-Case Max : 83.3 oC/W