Mosfet 105N03
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 140 W
- Maximum Drain-Source Voltage |Vds|: 30 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
- Maximum Drain Current |Id|: 150 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 42 nC
- Rise Time (tr): 91 nS
- Drain-Source Capacitance (Cd): 400 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0035 Ohm
- Package:Â TO-220