BPW77NA Vishay Semiconductor NPN phototransistor

The BPW77NA from Vishay Semiconductors is a high-sensitivity NPN silicon phototransistor designed for visible and near-infrared (NIR) light detection. It offers fast response time, high photo sensitivity, and excellent linearity, making it ideal for optical sensing, light measurement, and signal detection in a wide range of electronic applications.

Encapsulated in a clear plastic package with a daylight filter, the BPW77NA efficiently converts light intensity into proportional electrical signals. It provides a peak sensitivity around 850 nm, which makes it particularly well-suited for infrared emitter pairs and remote control systems.

Thanks to its low dark current and high collector current under illumination, the BPW77NA ensures reliable and accurate light detection even in low-light conditions. Its compact through-hole T-1¾ (5 mm) package allows for easy integration into DIY electronics, robotics, and sensor modules.

Key Features:

• High-sensitivity NPN silicon phototransistor

• Spectral sensitivity range: 430 nm to 1100 nm

• Peak sensitivity: around 850 nm

• High radiant sensitivity and low dark current

• Fast switching time for optical signal detection

• Daylight filter for ambient light suppression

• Through-hole T-1¾ (5 mm) clear package

• RoHS compliant and lead-free