Showing 1–12 of 90 results

10N20 N-Channel Mosfet Transistor 200V 9.5A

30.00 inc. GST
  • N-Channel Mosfet
  • Low Gate Charge (Typ. 20 nC)
  • Low Crss (Typ. 40.5 pF)
  • 100% Avalanche Tested
  • Drain Current: ID= 9.5A at TC=25℃
  • Drain Source Voltage: VDS = 200V
  • Static Drain-Source On-Resistance: RDS(on) < 0.36 Ω
  • Package: TO-220F

10N60C N-Channel Mosfet Transistor 600V 9.5A

45.00 inc. GST
  • N-Channel Mosfet
  • Low Gate Charge (Typ. 44 nC)
  • Low Crss (Typ. 18 pF)
  • 100% Avalanche Tested
  • Drain Current : ID= 9.5A at TC=25℃
  • Drain Source Voltage : VDSS = 600V
  • Static Drain-Source On-Resistance : RDS(on) <0 .73 Ω
  • Package: TO-220F

10N80 N-Channel Mosfet Transistor 800V 10A

50.00 inc. GST
  • N-Channel Mosfet
  • Drain Current: ID= 10A at TC= 25℃
  • Drain Source Voltage: VDSS = 800V
  • Static Drain-Source On-Resistance: 1.1Ω
  • Package: TO-220F

11N80 Mosfet 800V 11A

90.00 inc. GST
  • N-Channel Mosfet
  • Drain Source Voltage: 800V
  • Drain Current: 11A
  • Static Drain-Source On-Resistance: 450mΩ
  • Fast switching capability
  • Avalanche energy specified
  • Improved dv/dt capability, high ruggedness
  • Package: TO-220F
 

11N90C N-Channel Mosfet Transistor 900V 11A

110.00 inc. GST
  • 11A, 900V, RDS(on) = 1.1Ω  at VGS = 10 V, ID = 3.5A
  • Low gate charge ( typical 60 nC)
  • Low Crss ( typical 23pF)
  • Package: TO-3PN
  • N-Channel Mosfet
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

13N60 N-Channel Power Mosfet Transistor 650V 11A

50.00 inc. GST
  • N-Channel Power Mosfet
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Drain Current: ID= 11A at TC= 25℃
  • Drain Source Voltage: VDSS = 650V
  • Static Drain-Source On-Resistance: RDS(on) < 0.36Ω
  • Total Power Dissipation: 25W
  • Package: TO-220FP

2N60 N-Channel Mosfet Transistor 600V 2A

20.00 inc. GST
  • N-Channel Mosfet
  • 100% avalanche tested
  • Low gate charge (Typ. 8.5nC)
  • Low Crss (Typ. 4.3pF)
  • Drain Current ID: 2A
  • Drain Source Voltage: VDS= 600V
  • Static Drain-Source On-Resistance: RDS(on) < 4.7 Ω
  • Package: TO-220F

2SK1356 N-Channel Mosfet Transistor 900V 3A

45.00 inc. GST
  • Type Designator: 2SK1356
  • Type of Transistor: MOSFET
  • N-Channel Mosfet
  • Drain Current: 3A
  • Drain Source Voltage: 900V
  • Static Drain-Source On-Resistance: <4.3Ω
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 40 W
  • Maximum Gate-Source Voltage |Vgs|: 30 V
  • Maximum Junction Temperature (Tj): 150 °C
  • Rise Time (tr): 55 nS
  • Drain-Source Capacitance (Cd): 120 pF
  • Maximum Drain-Source On-State Resistance (Rds): 4.3 Ohm
  • Package: TO-22

2SK1358 N-Channel Mosfet Transistor 900V 9A

65.00 inc. GST
  • N-Channel Mosfet
  • Drain Current: 9A
  • Drain Source Voltage: 900V
  • Static Drain-Source On-Resistance: <1.4Ω
  • Drain Power Dissipation: 150W
  • Package: TO-3P

2SK1535 N-Channel Power Mosfet Transistor 900V 3A

185.00 inc. GST
  • N-Channel Mosfet
  • Drain Current: 5A
  • Drain Source Voltage: 900V
  • Static Drain-Source On-Resistance: <2.8Ω
  • Drain Power Dissipation: 125W
  • Package: TO-220
  • Fast Switching Speed
  • Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

2SK1643 N-Channel Mosfet Transistor 900V 5A

40.00 inc. GST
  • N-Channel Mosfet
  • Drain Current: 5A
  • Drain Source Voltage: 900V
  • Static Drain-Source On-Resistance: <2.8Ω
  • Drain Power Dissipation: 125W
  • Package: TO-220
  • Fast Switching Speed
  • Minimum Lot-to-Lot variations for robust device performance

2SK2233 N-Channel Mosfet Transistor 60V 45A

130.00 inc. GST
  • N-Channel Mosfet
  • Drain Current: 45A
  • Drain Source Voltage: 60V
  • Static Drain-Source On-Resistance: <55mΩ
  • Package: TO-3P