10N80 N-Channel Mosfet Transistor 800V 10A
IRF3710 N-Channel Power Mosfet Transistor 100V 57A
60N10 N-Channel Mosfet Transistor 100V 60A
CEP83A3 N-Channel FET 30V 100A
70N10 N-Channel Power Mosfet Transistor 100V 65A
Mosfet 12N60
- 12N60 is the type designation.
- MOSFET is the transistor type used in the 12N60.
- N-Channel is the type of control channel.
- W: 225 Maximum power dissipation (Pd)
- |Uds| maximum drain-source voltage, V: 600
- Maximum drain current |Id|, A: 12 Maximum gate-source voltage |Ugs|, V: 30
- Maximum junction temperature (Tj), in degrees Celsius: 150
- 12N60 transistor rise time (tr), nS: 115
- Capacitance at the drain (Cd), pF: 200
- Maximum on-state drain-source resistance (Rds), Ohm: 0.6
60NF06 N-Channel Power Mosfet Transistor 60V 60A
85T03GP N-Channel Power Mosfet Transistor 30V 75A
Mosfet 105N03
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 140 W
- Maximum Drain-Source Voltage |Vds|: 30 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
- Maximum Drain Current |Id|: 150 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 42 nC
- Rise Time (tr): 91 nS
- Drain-Source Capacitance (Cd): 400 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0035 Ohm
- Package:Â TO-220
IRFP460 Power Mosfet Transistor 500V 20A
IRFP450 Power Mosfet Transistor 500V 14A
Mosfet 11N60 Small
- Type Designator: 11N60
- Type of Transistor: MOSFET(Big)
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage |Vds|: 650 V
- Maximum Drain Current |Id|: 11 A
- Maximum Junction Temperature (Tj): 150 °C
- Extremely low gate charge (often Qg=40nC)
- A low effective output capacitance (typical Coss.eff=95pF)