10N80 N-Channel Mosfet Transistor 800V 10A

₹65.00 inc. GST
  • N-Channel Mosfet
  • Drain Current: ID= 10A at TC= 25℃
  • Drain Source Voltage: VDSS = 800V
  • Static Drain-Source On-Resistance: 1.1Ω
  • Package: TO-220F

IRF3710 N-Channel Power Mosfet Transistor 100V 57A

₹40.00 inc. GST
  • N-Channel Power Mosfet
  • Drain Current: ID= 57A at TC= 25℃
  • Drain Source Voltage:VDS = 100V
  • Static Drain-Source On-Resistance:  RDS(on)=23mΩ
  • Power Dissipation: 200W
  • Package: TO-220AB

60N10 N-Channel Mosfet Transistor 100V 60A

₹35.00 inc. GST
  • N-Channel Mosfet
  • Drain Source Voltage: 100V
  • Drain Current: 60A
  • Static Drain-Source On-Resistance: 16mΩ
  • RDS(on) = 0.02Ω
  • Repetitive avalanche data at 100°C
  • Low gate charge
  • Very high current capability

CEP83A3 N-Channel FET 30V 100A

₹65.00 inc. GST
  • N-Channel FET
  • Drain Current: 100A
  • Drain Source Voltage: 30V
  • Static Drain-Source On-Resistance: <8mΩ
  • Package: TO-220

70N10 N-Channel Power Mosfet Transistor 100V 65A

₹135.00 inc. GST
  • N-Channel Power Mosfet
  • Exceptional dv/dt capability
  • Extremely low on-resistance RDS(on)
  • 100% avalanche tested
  • Drain Current: ID= 65A at TC= 25℃
  • Drain Source Voltage: VDSS = 100V
  • Static Drain-Source On-Resistance: RDS(on) < 0.0195 Ω
  • Total Power Dissipation: 150W
  • Package: TO-247

Mosfet 12N60

₹60.00 inc. GST
  • 12N60 is the type designation.
  • MOSFET is the transistor type used in the 12N60.
  • N-Channel is the type of control channel.
  • W: 225 Maximum power dissipation (Pd)
  • |Uds| maximum drain-source voltage, V: 600
  • Maximum drain current |Id|, A: 12 Maximum gate-source voltage |Ugs|, V: 30
  • Maximum junction temperature (Tj), in degrees Celsius: 150
  • 12N60 transistor rise time (tr), nS: 115
  • Capacitance at the drain (Cd), pF: 200
  • Maximum on-state drain-source resistance (Rds), Ohm: 0.6

85T03GP N-Channel Power Mosfet Transistor 30V 75A

₹70.00 inc. GST
  • N-Channel Power Mosfet
  • Low Gate Charge
  • Fast Switching
  • Simple Drive Requirement
  • Drain-Source Voltage: VDSS = 30V
  • Gate-Source Voltage: VGS = ±20V
  • Drain Current: ID = 75 A at TC = 250C
  • Package: TO-220

IRFP450 Power Mosfet Transistor 500V 14A

₹100.00 inc. GST
  • Drain Current: ID= 14A at TC=25℃
  • Drain Source Voltage: VDSS = 500V
  • Static Drain-Source On-Resistance: RDS(on) = 0.40 Ω
  • Power Dissipation: 190W
  • Package: TO-247AC
  • Power Mosfet
  • Dynamic dv/dt Rating
  • Fast Switching
  • Repetitive Avalanche Rated
 

IRFP460 Power Mosfet Transistor 500V 20A

₹100.00 inc. GST
  • Power Mosfet
  • Drain Current: ID= 20A at TC=25℃
  • Drain Source Voltage: VDSS = 500V
  • Static Drain-Source On-Resistance: RDS(on) = 0.27 Ω
  • Power Dissipation: 280W
  • Dynamic dv/dt Rating
  • Fast Switching
  • Repetitive Avalanche Rated
  • Ease of paralleling
  • Package: TO-247AC

60NF06 N-Channel Power Mosfet Transistor 60V 60A

₹28.00 inc. GST
  • N-Channel Power Mosfet
  • Drain Current: ID= 60A at TC= 25℃
  • Drain Source Voltage: VDSS = 60V
  • Static Drain-Source ON Resistance: <0.016Ω
  • Total Power Dissipation: 110W
  • Package: TO-220

IRF530 N-Channel Power Mosfet Transistor 100V 14A

₹30.00 inc. GST
  • Type Designator: IRF530
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 90 W
  • Maximum Drain-Source Voltage |Vds|: 100 V
  • Maximum Gate-Source Voltage |Vgs|: 20 V
  • Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
  • Maximum Drain Current |Id|: 16 A
  • Maximum Junction Temperature (Tj): 175 °C
  • Total Gate Charge (Qg): 26 nC
  • Drain-Source Capacitance (Cd): 900 pF
  • Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
  • Package: TO220

TL071 Low Noise J-FET Single Operational Amplifier IC

₹30.00 inc. GST
  • Supply Voltage Max: ±18V
  • Input Voltage: ±15V
  • Differential Input Voltage: ±30V
  • Power Dissipation: 680mW
  • Input Offset Voltage: 3mV
  • Input Offset Current: 5pA
  • Input Bias Current: 20pA
  • Slew Rate: 16V/µs
  • Package: DIP-8
  • Low noise J-FET single operational amplifier
  • Wide common-mode and differential voltage range
  • Low input bias and offset current
  • Output short-circuit protection
  • Low harmonic distortion:0.01%
  • Internal frequency compensation