IRF630 N-Channel Power Mosfet Transistor 200V 9A
IRF620 N-Channel Power Mosfet Transistor 200V 5.2A
2SK954 N-Channel Power Mosfet Transistor 800V 3A
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 100 W
- Maximum Drain-Source Voltage |Vds|: 800 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 3 A
- Maximum Junction Temperature (Tj): 150 °C
- Turn-on Time (ton): 60 nS
- Drain-Source Capacitance (Cd): 90 p
- Maximum Drain-Source On-State Resistance (Rds): 4 Ohm
- Package:Â TO3P
2SK903 N-Channel Power Mosfet Transistor 800V 3A
2SK793 N-Channel Mosfet Transistor 850V 5A
- N-Channel Mosfet
- Drain Current: 5A
- Drain Source Voltage: Â 850V
- Static Drain-Source On Resistance: <2.5Ω
- Total Power Dissipation: 150W
- Maximum Power Dissipation (Pd): 150
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 110 nS
- Drain-Source Capacitance (Cd): 190 pF
- Package: Â TO3P
2SK2765 N-Channel Mosfet Transistor 800V 7A
2SK2845 N-Channel Mosfet Transistor 900V 1A
2SK2233 N-Channel Mosfet Transistor 60V 45A
2SK1356 N-Channel Mosfet Transistor 900V 3A
- Type Designator: 2SK1356
- Type of Transistor: MOSFET
- N-Channel Mosfet
- Drain Current: 3A
- Drain Source Voltage: 900V
- Static Drain-Source On-Resistance: <4.3Ω
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 40 W
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 55 nS
- Drain-Source Capacitance (Cd): 120 pF
- Maximum Drain-Source On-State Resistance (Rds): 4.3 Ohm
- Package: TO-22
