5-36v Switch Drive High-power MOSFET Trigger Module
- Operating Voltage: DC 5V - 36V;
- The trigger source: digital high-low (DC3.3V - 20V), can be connected microcontroller IO port, PLC interfaces, DC power, you can access the PWM signal, the signal frequency 0--20KHZ perfect support.
- Output capacity: DC 5V - 36V, at room temperature, continuous current 15A, power 400W! Lower auxiliary cooling conditions, the maximum current up to 30A.
- Applications: You can control the output of power equipment, motors, light bulbs, LED lights, DC motors, micro-pumps, solenoid valves, etc.. You can enter
- PWM, motor speed control, lamp brightness.
- Availability: unlimited switch
- Operating temperature: -40-85
- Dimension: 34mm x 17mm x 12mm
- The use of imported dual-MOS parallel active output, lower resistance, more current, strong power at room temperature, 15A, 400W, to meet the most use of the equipment
- Wide voltage, the perfect support for PWM
- Easily control high power devices
- Input PWM to achieve motor speed control, lamp brightness control
IRFP064 N-Channel Power Mosfet Transistor 60V 70A
- N-Channel Power Mosfet
- Designator: IRFP064
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 300 W
- Maximum Drain-Source Voltage |Vds|: 60 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 70 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 190(max) nC
- Rise Time (tr): 190 nSDrain-Source
- Capacitance (Cd): 3200 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm
- Drain Current: ID= 70A at TC=25℃
- Drain Source Voltage: VDSÂ = 60V
- Static Drain-Source On-Resistance: RDS(on)=9mΩ
- Power Dissipation: 300W
- Package: TO-247AC
IRFP054 N-Channel Power Mosfet Transistor 60V 70A
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Mosfet 10N90 Big
- Type Designator: 10N90
- Type of Transistor: MOSFET(Big)
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 183 W
- Maximum Drain-Source Voltage |Vds|: 900 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 10 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 54 nS
- Drain-Source Capacitance (Cd): 245 pF
- Maximum Drain-Source On-State Resistance (Rds): 1.15 Ohm
- Package: TO-247 TO-3P