85T03GP N-Channel Power Mosfet Transistor 30V 75A
40T03GP N-Channel Power Mosfet Transistor 30V 28A
LF351 Wide Bandwidth JFET Input Operational Amplifier IC
40N03GP N-Channel Power Mosfet Transistor 30V 40A
2SK1643 N-Channel Mosfet Transistor 900V 5A
13N60 N-Channel Power Mosfet Transistor 650V 11A
8N60 N-Channel Power Mosfet Transistor 600V 7.5A
- N-Channel Power Mosfet
- Ultra low gate charge ( typical 28 nC )
- Low reverse transfer capacitance ( Crss = typical 12.0 pF )
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- Drain Current: ID= 7.5A at TC= 25℃
- Drain Source Voltage: VDSSÂ = 600V
- Static Drain-Source On-Resistance: RDS(on) < 1.2Ω
- Package: TO-220F
7N90 N-Channel Power Mosfet Transistor 900V 7A
2SK1358 N-Channel Mosfet Transistor 900V 9A
10N80 N-Channel Mosfet Transistor 800V 10A
CEP83A3 N-Channel FET 30V 100A
Mosfet 12N60
- 12N60 is the type designation.
- MOSFET is the transistor type used in the 12N60.
- N-Channel is the type of control channel.
- W: 225 Maximum power dissipation (Pd)
- |Uds| maximum drain-source voltage, V: 600
- Maximum drain current |Id|, A: 12 Maximum gate-source voltage |Ugs|, V: 30
- Maximum junction temperature (Tj), in degrees Celsius: 150
- 12N60 transistor rise time (tr), nS: 115
- Capacitance at the drain (Cd), pF: 200
- Maximum on-state drain-source resistance (Rds), Ohm: 0.6