Mosfet 15R1203

₹80.00 inc. GST
  • Function : 1200V, 15A
  • Reverse conducting IGBT / Reverse conducting IGBT
  • Package: TO-247-3 Type
  • Powerful monolithic body diode with a low forward voltage
  • Designed for soft commutation only
  • very tight parameter distribution
  • high ruggedness, temperature stable behavior
  • low VCEsat
  • easy parallel switching capability due to positive
  • temperature coefficient in VCEsat
  • Low EMI

Mosfet 10N90 Big

₹120.00 inc. GST
  • Type Designator: 10N90
  • Type of Transistor: MOSFET(Big)
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 183 W
  • Maximum Drain-Source Voltage |Vds|: 900 V
  • Maximum Gate-Source Voltage |Vgs|: 30 V
  • Maximum Drain Current |Id|: 10 A
  • Maximum Junction Temperature (Tj): 150 °C
  • Rise Time (tr): 54 nS
  • Drain-Source Capacitance (Cd): 245 pF
  • Maximum Drain-Source On-State Resistance (Rds): 1.15 Ohm
  • Package: TO-247 TO-3P

Mosfet 12N60

₹60.00 inc. GST
  • 12N60 is the type designation.
  • MOSFET is the transistor type used in the 12N60.
  • N-Channel is the type of control channel.
  • W: 225 Maximum power dissipation (Pd)
  • |Uds| maximum drain-source voltage, V: 600
  • Maximum drain current |Id|, A: 12 Maximum gate-source voltage |Ugs|, V: 30
  • Maximum junction temperature (Tj), in degrees Celsius: 150
  • 12N60 transistor rise time (tr), nS: 115
  • Capacitance at the drain (Cd), pF: 200
  • Maximum on-state drain-source resistance (Rds), Ohm: 0.6

Mosfet 11N60 Small

₹45.00 inc. GST
  • Type Designator: 11N60
  • Type of Transistor: MOSFET(Big)
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage |Vds|: 650 V
  • Maximum Drain Current |Id|: 11 A
  • Maximum Junction Temperature (Tj): 150 °C
  • Extremely low gate charge (often Qg=40nC)
  • A low effective output capacitance (typical Coss.eff=95pF)

Mosfet 10N90

₹75.00 inc. GST
  • 10A,900V, RDS(on) = 1.35Ω @VGS = 10 V
  • Low gate charge ( typical 127 nC)
  • Low Crss ( typical 10 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability 1.5 V/ns

Mosfet 108N03

₹45.00 inc. GST
  • Maximum Drain-Source On-State Resistance (Rds): 1.15 Ohm
  • RDS(ON) = 6.0mΩ @VGS = 10V
  • Low Capacitance
  •  Optimized Gate Charge
  •  Fast Switching Capability
  •  Avalanche Energy Specified

Mosfet 105N03

₹55.00 inc. GST
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 140 W
  • Maximum Drain-Source Voltage |Vds|: 30 V
  • Maximum Gate-Source Voltage |Vgs|: 20 V
  • Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
  • Maximum Drain Current |Id|: 150 A
  • Maximum Junction Temperature (Tj): 175 °C
  • Total Gate Charge (Qg): 42 nC
  • Rise Time (tr): 91 nS
  • Drain-Source Capacitance (Cd): 400 pF
  • Maximum Drain-Source On-State Resistance (Rds): 0.0035 Ohm
  • Package: TO-220

Mosfet 100N03 SMD

₹30.00 inc. GST
  • Type of Transistor: MOSFET
  • Type Designator:100N03
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage:30 V
  • Maximum Gate-Source Voltage:20 V
  • Maximum Drain Current:100 A
  • Drain-Source Capacitance:1300 pF
  • Maximum Operating Junction Temperature:175 °C
  • Maximum Drain-Source On-State Resistance:0.0055 Ohm
  • Maximum Power Dissipation:180 W
  • Package: TO220
  • Simple Drive Requirement
  • Low Gate Charge
  • Fast Switching
  • RoHS Compliant
  • High cell density for ultra-low RdsonAvalanche voltage and current are fully characterized.

IRF9640 P-Channel Power Mosfet Transistor -200V -11A

₹55.00 inc. GST
  • P-Channel Power Mosfet
  • Drain Current: ID= -11A at TC=25℃
  • Drain Source Voltage: VDS = -200V
  • Static Drain-Source On-Resistance: RDS(on)=500mΩ
  • Power Dissipation: 125W
  • Package: TO-220AB
  • Dynamic dV/dt Rating
  • Repetitive Avalanche Rated
  • Isolated Central Mounting Hole
  • Fast Switching
  • Ease of Paralleling
  • Simple Drive Requirements
  • Lead (Pb)-free Available

IRF840 N-Channel Mosfet Transistor 500V 8A

₹40.00 inc. GST
  • N-Channel Mosfet
  • Low gate charge ( typical 41 nC)
  • Low Crss ( typical 35 pF)
  • Fast switching
  • Improved dv/dt capability
  • Drain Current: ID= 8A at TC=25℃
  • Drain Source Voltage: VDSS = 500V
  • Drain-Source On-Resistance: RDS(on) < 0.8 Ω
  • Power Dissipation: 134W
  • Package: TO-220

IRF740 Power Mosfet Transistor 400V 10A

₹40.00 inc. GST
  • Power Mosfet
  • Dynamic dv/dt Rating
  • Repetitive Avalanche Rated
  • Fast Switching
  • Drain Current: ID= 10A at TC=25℃
  • Drain Source Voltage: VDSS = 400V
  • Static Drain-Source On-Resistance: RDS(on) < 0.55Ω
  • Power Dissipation: 125W
  • Package: TO-220AB

IRFP9240 P-Channel Power Mosfet Transistor -200V -12A

₹120.00 inc. GST
  • P-Channel Power Mosfet
  • Drain Current: ID= -12A at TC=25℃
  • Drain Source Voltage: VDS = -200V
  • Static Drain-Source On-Resistance:  RDS(on) < 500mΩ
  • Power Dissipation: 150W
  • Package: TO-247AC
  • Dynamic dV/dt Rating
  • Repetitive Avalanche Rated
  • Isolated Central Mounting Hole
  • Fast Switching
  • Ease of Paralleling
  • Simple Drive Requirements
  • Lead (Pb)-free Available