The Mosfet 15R1203 is manufactured in a through-hole TO-247-3 package is a Reverse conducting IGBT / Reverse conducting IGBT. This Mosfet 15R1203 features a Powerful monolithic body diode with a low forward voltage.
All the IGBT under this series features novel field-stop IGBT technology, ON Semiconductor’s new series of field-stop IGBTs offers the optimum performance for inductive cooking, invertertised Microwave oven, Resonant Converters, and other applications where low conduction and switching losses are essential. As a result, offers very low switching loss and low saturation voltage making it perfect for use in low voltage switching driver designs. Thereby providing comparatively high efficiency for its switching range. By providing low RDS(on), Ciss, and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
IGBT refers to an insulated-gate bipolar transistor designed with an insulated gate terminal. The IGBT is integrated into a single device, a control input with a MOS structure, and a bipolar power transistor that functions as an output switch. This IGBT is co-packaged with a soft recovery ultra-fast rectifier and also uses an advanced termination scheme. Therefore, provide an enhanced and reliable high voltage–blocking capability.
Applications:
• Inductive cooking
• Inverterized microwave ovens
• Resonant converters
• Soft switching applications
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