15N120 IGBT 1200V 15A

55.00 inc. GST
  • Collector-Emitter Voltage, VCES: 1200V
  • Gate-Emitter Voltage, VGES: ±20V
  • Collector Current IC (@ TC = 250C): 30A
  • Saturation Voltage: VCE(sat), typ: 1.9 V
  • Package: TO-3P
  • 1200 V, 15 A NPT Trench IGBT
  • NPT Trench Technology, Positive temperature coefficient
  • Extremely Enhanced Avalanche Capability
  • Low Saturation Voltage

15N60 IGBT 600V 15A

100.00 inc. GST
  • Short Circuit Rated IGBT
  • Collector Current: 15A
  • Collector-Emitter Voltage: 600V
  • Collector to Emitter Saturation Voltage: 2.2V
  • Short Circuit Withstand Time: 10µs at Tc=1000C, VGE= 15V
  • Package: TO-3P

20N60 Field Stop IGBT 600V 20A

70.00 inc. GST
  • Field Stop IGBT
  • Collector to Emitter Voltage, VCES = 600 V
  • Gate to Emitter Voltage, VGES = ±20V
  • Collector Current, IC = 20A at TC = 25oC
  • Package : TO-3PF

30N60 IGBT 600V 30A

180.00 inc. GST
  • Collector-emitter voltage VCE = 600V
  • Collector current = 30A
  • Collector-emitter saturation voltage, VCEsat (@TVJ=250C) =2.1 V
  • Package : TO-247-3-21
  • Short circuit withstand time: 10 µs
  • 75% lower Eoff compared to previous generation combined with low conduction losses
  • Pb-free lead plating; RoHS compliant

40N60 Field Stop IGBT 600V 40A

200.00 inc. GST
  • Field Stop IGBT
  • High current capability
  • Collector to Emitter Voltage 600V
  • Collector Current 40A
  • Low saturation voltage: V CE(sat) =1.8V at  IC = 40A
  • High input impedance
  • Fast switching
  • RoHS compliant
  • Package: TO-247

CM100DU-12H MITSUBISHI IGBT MODULES

2,000.00 inc. GST
  • Model Name/Number: CM100DU-12H
  • Brand: Mitsubishi
  • Voltage: 600 V
  • Usage/Application: UPS
  • Current Rating: 100 A
  • Material: Plastic
  • Low drive power
  • Low vce(sat)
  • Discrete super-fast recovery
  • Free-wheel diode
  • High frequency operation
  • Isolated baseplate for easy heat sinking