The 15N120 is designed as a 1200V, 15A IGBT manufactured in a through-hole TO-3P package. 15N120 IGBT features low switching losses, high energy efficiency and high avalanche ruggedness for soft switching applications such as IH (induction heating), microwave oven, etc. The 15N120 is defined as a high voltage IGBT with a Collector to Emitter voltage of 1200V and a continuous collector current of 30A. It also provides a low collector-emitter saturation voltage of 1.9V and low switching losses. All the IGBT under this series features Non-Punch Though (NPT) Technology. As a result, offers very low switching loss and low saturation voltage making it perfect for use in low voltage switching driver designs with comparatively high efficiency for its switching range.
The current rating of this IGBT is indicated after the prefix FGA. For example, the 15N120 IGBT is rated for 15A Collector current at 125°C. The number 120 indicates that the IGBT has a collector-emitter voltage of 1200V. Moreover, the 15N120 IGBTs offers extended avalanche capability that is the IGBTs are immune to stray inductance problems. Even when the Collector-Emitter voltage exceeds the rated voltage they do not break down because of this property. Hence this IGBT is widely used in rugged switching designs.
Like all IGBT’s, this 15N120 suffers from low switching speed and the high voltage drop across the collector and emitter compared with MOSFETs. So in case if you need highly efficient and faster-switching device then you should prefer MOSFETs over IGBT.
IGBT refers to an insulated-gate bipolar transistor which is a bipolar transistor with an insulated gate terminal. The IGBT integrated into a single device, a control input with a MOS structure and a bipolar power transistor that functions as an output switch.Â
Applications
- High Voltage, the high current switching device
- Induction Heating
- Microwave Oven
- Large Solenoids
- Tesla Coils
- Converters or Inverter circuits
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