CM100DU-12H MITSUBISHI IGBT MODULES

Mitsubishi IGBT Modules designed for wide usage in switching applications. Each CM100DU-12H MITSUBISHI IGBT module consists of two IGBTs in a half-bridge configuration. In which each transistor having a reverse-connected super-fast recovery free-wheel diode. In this device, all the components and interconnects seperated from the heat sinking baseplate, also offering simplified system assembly and thermal management. It features low Drive Power,  low VCE(sat), Discrete Super-Fast Recovery Free-Wheel Diode. And also offers high-frequency operation along with  isolated baseplate for easy heat sinking.

Since 1990, the IGBT (Insulated Gate Bipolar Transistor) module has pushed the trend toward high currents and high voltage in inverters used in a wide range of industrial equipment. The chip structure has evolved from flat planar to trench gate, and the CSTBTTM (Mitsubishi Electric’s unique IGBT that uses the carrier cumulative effect) has enabled low loss and smaller size for industrial equipment. These IGBT modules include a three-phase converter, inverter, and brake circuit (CIB), making inverter system design easier.

In the meanwhile, these modules are a good addition to small inverter systems since they reduce package size by 36% compared to Mitsubishi Electric’s current module. Furthermore, with the introduction of the 7th-generation IGBT made using CSTBTTM*2 and a diode with a relaxed field of cathode (RFC) structure, the power loss was significantly decreased. The solder-attached part is likewise no longer required with the new IGBT construction. As a result, the thermal cycle lifespan is extended, contributing to improved inverter dependability.

APPLICATION

• UPS
• NC machine
• AC-Drive control
• Servo
• Welders