The UTT108N03 is an advanced N-channel level power MOSFET made with UTC’s innovative trench technology, which has been carefully designed to reduce on-resistance and keep gate charge low for enhanced switching performance.
A MOSFET is designed as a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) explicitly to handle significant power levels. This N-Channel MOSFET is defined as a type of MOSFET in which the channel of the MOSFET is made up of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel. It is one of the prominent power semiconductor devices in the world, due to its low gate drive power, and wide bandwidth. This makes it ideal for use in a wide range of applications such as in low-voltage (less than 200V) switches.