105N03 N-Channel enhancement mode power field-effect transistors are designed as an advanced technology specially tailored to attenuate on-state resistance provide superior switching performance. And also withstand high energy pulse within the avalanche and commutation mode. These devices are compatible with high-efficiency switching DC/DC converters, and switch-mode power supplies.
105N03 manufactured in TO-220 package that is universally accepted for all commercial-industrial applications. 105N03 provides a Drain Source Voltage of 30V at a drain current of 150A. These MOSFET Transistors are designed explicitly to achieve extremely low on-resistance per silicon area and lower gate charge performance. This feature makes this device ideal for use as a primary switch in advanced high-efficiency isolated DC-DC converters.
A MOSFET is designed as a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) explicitly to handle significant power levels. This N-Channel MOSFET is defined as a type of MOSFET in which the channel of the MOSFET is made up of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel. It is one of the prominent power semiconductor devices in the world, due to its low gate drive power, and wide bandwidth. This makes it ideal for use in a wide range of applications such as in low-voltage (less than 200V) switches.