The N-channel MOS FET 100N03 was designed for high current switching applications. It’s ideal for PWM, load switching, and E-Bike controller applications because of its rugged EAS capabilities and ultra-low RDS(ON). This Advanced Power MOSFETs 100N03 SMD from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-262 package is widely used in commercial and industrial surface mount applications, and it is particularly well suited to low-voltage applications such as DC/DC converters. Furthermore, the employment of specialised process technologies improves ESD capacity.
A MOSFET is designed as a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) explicitly to handle significant power levels. This N-Channel MOSFET is defined as a type of MOSFET in which the channel of the MOSFET is made up of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel. It is one of the prominent power semiconductor devices in the world, due to its low gate drive power, and wide bandwidth. This makes it ideal for use in a wide range of applications such as in low-voltage (less than 200V) switches.
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