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Mosfet 105N03

45.00 inc. GST
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 140 W
  • Maximum Drain-Source Voltage |Vds|: 30 V
  • Maximum Gate-Source Voltage |Vgs|: 20 V
  • Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
  • Maximum Drain Current |Id|: 150 A
  • Maximum Junction Temperature (Tj): 175 °C
  • Total Gate Charge (Qg): 42 nC
  • Rise Time (tr): 91 nS
  • Drain-Source Capacitance (Cd): 400 pF
  • Maximum Drain-Source On-State Resistance (Rds): 0.0035 Ohm
  • Package: TO-220