IRF840 N-Channel Power Mosfet Transistor 100V 14A series designed as the next generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism. These power MOSFET Transistors designed explicitly to achieve extremely low on-resistance per silicon area and lower gate charge performance. This feature makes this device ideal for use as a primary switch in advanced high-efficiency isolated AC-DC converters. And also for applications with low on-resistance requirements. IRF840 manufactured in TO-220 package that is universally accepted for all commercial-industrial applications. Also at power dissipation levels to approximately 90 watts.
IRF840 is simply a three-terminal silicon device, that offers a current conduction capability of about 8A, fast switching speed. Moreover, it features low on-state resistance, and breakdown voltage rating of 500V. These power Mosfet device offers a wide range of applications in electronic ballast, and low power switching mode power appliances. These resulting transistor exhibit extremely high packing density for low on-resistance. And also combined with high switching speed and rugged device design provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
A power MOSFET designed as a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) explicitly to handle significant power levels. This Power MOSFET Transistor features high switching speed and good efficiency at low voltages. It is one of the prominent power semiconductor device in the world, due to its low gate drive power, fast switching speed, easy advanced paralleling capability, wide bandwidth. Thus makes it ideal for use in wide range of applications such as in low-voltage (less than 200V) switch.
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