Showing 1–12 of 126 results

10N20 N-Channel Mosfet Transistor 200V 9.5A

30.00 inc. GST
  • N-Channel Mosfet
  • Low Gate Charge (Typ. 20 NC)
  • Low Cross (Typ. 40.5 pF)
  • 100% Avalanche Tested
  • Drain Current: ID= 9.5A at TC=25℃
  • Drain Source Voltage: VDS = 200V
  • Static Drain-Source On-Resistance: RDS(on) < 0.36 Ω
  • Package: TO-220F

10N60C N-Channel Mosfet Transistor 600V 9.5A

50.00 inc. GST
  • N-Channel Mosfet
  • Low Gate Charge (Typ. 44 NC)
  • Low Cross (Typ. 18 pF)
  • 100% Avalanche Tested
  • Drain Current: ID= 9.5A at TC=25℃
  • Drain Source Voltage : VDSS = 600V
  • Static Drain-Source On-Resistance : RDS(on) <0 .73 Ω
  • Package: TO-220F

10N80 N-Channel Mosfet Transistor 800V 10A

50.00 inc. GST
  • N-Channel Mosfet
  • Drain Current: ID= 10A at TC= 25℃
  • Drain Source Voltage: VDSS = 800V
  • Static Drain-Source On-Resistance: 1.1Ω
  • Package: TO-220F

11N90C N-Channel Mosfet Transistor 900V 11A

200.00 inc. GST
  • 11A, 900V, RDS(on) = 1.1Ω at VGS = 10 V, ID = 3.5A
  • Low gate charge ( typical 60 nC)
  • Low Crss ( typical 23pF)
  • Package: TO-3PN
  • N-Channel Mosfet
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

13N60 N-Channel Power Mosfet Transistor 650V 11A

50.00 inc. GST
  • N-Channel Power Mosfet
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Drain Current: ID= 11A at TC= 25℃
  • Drain Source Voltage: VDSS = 650V
  • Static Drain-Source On-Resistance: RDS(on) < 0.36Ω
  • Total Power Dissipation: 25W
  • Package: TO-220FP

20N60 Mosfet Transistor Small 600V 20A

111.00 inc. GST
  • VDSS = 600 V
  • Best RDS(on) in TO 220, RDS(on) = 0.19 Ω
  • ID = 20A
  • Package: TO247
  • Ultra low gate charge
  • Improved periodic avalanche rating
  • Extreme dv/dt rated
  • Optimized capacitances
  • Improved noise immunity

2N2222A NPN Plastic Transistor 75V 0.6A

2.00 inc. GST
  • Collector-base Voltage: 75V
  • Collector Current: 0.6A
  • Total Power Dissipation: 1.5W
  • Current Gain: 35 at 0.1 mA at 10 V
  • Transition Frequency: 300MHz
  • Transistor Polarity: NPN

2N2646 UJT

100.00 inc. GST
  • Available as “HR” (high reliability)
  • Available as non-RoHS (Sn/Pb plating)
  • Low emitter reverse current: 0.005µA (Typ)
  • PASSIVATED surface for reliability and uniformity
  • Maximum voltage between two bases (VB2B1): 35V
  • Maximum emitter reverse voltage (VB2E): 30V
  • Maximum RMS emitter current (Ie): 50mA
  • Maximum peak emitter current (Ie): 2A
  • Operating temperature range: -65ºC to +150ºC
  • Maximum power dissipation : 300mW

2N2904A PNP Transistor 60V 0.6A

15.00 inc. GST
  • Collector-base Voltage: 60V
  • Collector Current: 0.6A
  • Total Power Dissipation: 0.6W
  • Current Gain: 75 at 100uA at 10 V
  • Transition Frequency: 200MHz
  • Transistor Polarity: PNP
  • Package: T0-39

2N3055 NPN Power Transistor 100V 15A

35.00 inc. GST
  • Complementary Silicon NPN Power Transistor
  • Collector-base Voltage: 100V
  • Collector Current: 15A
  • Total Power Dissipation: 115W
  • Current Gain: 70
  • Transition Frequency: 2.5MHz
  • Package: T0-3

2N3904 NPN Transistor 60V 0.2A

4.00 inc. GST
  • Collector-base Voltage: 60V
  • Collector Current: 0.2A
  • Total Power Dissipation: 0.625W
  • Transition Frequency: 300MHz
  • Transistor Polarity: NPN
  • Package: T0-92

2N3906 PNP Transistor 40V 0.2A

4.00 inc. GST
  • Collector-base Voltage: 40V
  • Collector Current: 0.2A
  • Transistor Polarity: PNP
  • Total Power Dissipation: 0.625W
  • Current Gain: 100 at 10 mA at 1 V
  • Transition Frequency: 250MHz
  • Package: T0-92