IRFP064 N-Channel Power Mosfet Transistor 60V 70A
- N-Channel Power Mosfet
- Designator: IRFP064
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 300 W
- Maximum Drain-Source Voltage |Vds|: 60 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 70 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 190(max) nC
- Rise Time (tr): 190 nSDrain-Source
- Capacitance (Cd): 3200 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm
- Drain Current: ID= 70A at TC=25℃
- Drain Source Voltage: VDS = 60V
- Static Drain-Source On-Resistance: RDS(on)=9mΩ
- Power Dissipation: 300W
- Package: TO-247AC
IRFP054 N-Channel Power Mosfet Transistor 60V 70A
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2N2646 UJT
- Available as “HR” (high reliability)
- Available as non-RoHS (Sn/Pb plating)
- Low emitter reverse current: 0.005µA (Typ)
- PASSIVATED surface for reliability and uniformity
- Maximum voltage between two bases (VB2B1): 35V
- Maximum emitter reverse voltage (VB2E): 30V
- Maximum RMS emitter current (Ie): 50mA
- Maximum peak emitter current (Ie): 2A
- Operating temperature range: -65ºC to +150ºC
- Maximum power dissipation : 300mW
2SK2233 N-Channel Mosfet Transistor 60V 45A
IRFP9240 P-Channel Power Mosfet Transistor -200V -12A
- P-Channel Power Mosfet
- Drain Current: ID= -12A at TC=25℃
- Drain Source Voltage: VDS = -200V
- Static Drain-Source On-Resistance: RDS(on) < 500mΩ
- Power Dissipation: 150W
- Package: TO-247AC
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Lead (Pb)-free Available
