10N20 N-Channel Mosfet Transistor 200V 9.5A
10N60C N-Channel Mosfet Transistor 600V 9.5A
10N80 N-Channel Mosfet Transistor 800V 10A
11N90C N-Channel Mosfet Transistor 900V 11A
13N60 N-Channel Power Mosfet Transistor 650V 11A
20N60 Mosfet Transistor Small 600V 20A
2N2222A NPN Plastic Transistor 75V 0.6A
2N2646 UJT
- Available as “HR” (high reliability)
- Available as non-RoHS (Sn/Pb plating)
- Low emitter reverse current: 0.005µA (Typ)
- PASSIVATED surface for reliability and uniformity
- Maximum voltage between two bases (VB2B1): 35V
- Maximum emitter reverse voltage (VB2E): 30V
- Maximum RMS emitter current (Ie): 50mA
- Maximum peak emitter current (Ie): 2A
- Operating temperature range: -65ºC to +150ºC
- Maximum power dissipation : 300mW