2N5298 NPN Transistor 80V 4A
- Collector-base Voltage:Â 80V
- Collector Current:Â 4A
- Transistor Polarity:Â NPN
- Total Power Dissipation:Â 36W
- Current Gain min.:Â 20
- Transition Frequency: 800kHz
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
- High power and current handling capability
- Package:Â T0-220
2N5401 PNP Transistor 160V 0.6A
2N60 N-Channel Mosfet Transistor 600V 2A
2N6107 PNP Transistor 80V 7A
2N6110 PNP Transistor 40V 7A
2N6124 PNP Transistor 45V 4A
2N6288 NPN Transistor 40V 7A
2N7000 N-Channel Mosfet Transistor 60V 200mA
2SC2625 NPN Transistor 450V 10A
2SC3281 NPN Transistor 200V 15A
2SC5589 NPN Transistor 1500V 18A
- Type Designator: 2SC5589
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 200 W
- Maximum Collector-Base Voltage |Vcb|: 1500 V
- Maximum Collector-Emitter Voltage |Vce|: 750 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 18 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 2 MHz
- Collector Capacitance (Cc): 240 pF
- Forward Current Transfer Ratio (hFE), MIN: 5
- Package: 2-21F2A
2SK1356 N-Channel Mosfet Transistor 900V 3A
- Type Designator: 2SK1356
- Type of Transistor: MOSFET
- N-Channel Mosfet
- Drain Current: 3A
- Drain Source Voltage: 900V
- Static Drain-Source On-Resistance: <4.3Ω
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 40 W
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 55 nS
- Drain-Source Capacitance (Cd): 120 pF
- Maximum Drain-Source On-State Resistance (Rds): 4.3 Ohm
- Package: TO-22