These N-Channel enhancement mode power field-effect transistors are designed based on Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is specially tailored to attenuate on-state resistance, provide superior switching performance. And also withstand high energy pulse within the avalanche and commutation mode. These devices are compatible with high-efficiency switching DC/DC converters, switch-mode power supplies, also active power supply correction, electronic lamp ballast based n half-bridge topology .10N60C manufactured in TO-220AF package that is universally accepted for all commercial-industrial applications.
10N60C provides a Drain Source Voltage 600V at a drain current of 9.5A. These power MOSFET Transistors are designed explicitly to achieve extremely low on-resistance per silicon area and lower gate charge performance. This feature makes this device ideal for use as a primary switch in advanced high-efficiency isolated DC-DC converters
A MOSFET is designed as a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) explicitly to handle significant power levels. This N-Channel MOSFET is defined as a type of MOSFET in which the channel of the MOSFET is made up of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel. It is one of the prominent power semiconductor devices in the world, due to its low gate drive power, wide bandwidth. This makes it ideal for use in a wide range of applications such as in low-voltage (less than 200V) switches.
- Primary Side Switch