These N-Channel enhancement mode power field-effect transistors are designed based on Fairchild’s proprietary, self-aligned planar stripe, DMOS technology. This advanced technology is specially tailored to reduce conduction loss, improve switching performance. And also withstand high energy pulse within the avalanche and commutation mode. These devices are compatible with high-efficiency switching DC/DC converters, switch-mode power supplies, also DC-AC converters for uninterrupted power supplies and motor controls. 20N60 manufactured in TO-220F package that is universally accepted for all commercial-industrial applications.
20N60 provides a Drain Source Voltage 600V at a drain current 20A. These MOSFET Transistors are designed explicitly to achieve extremely low on-resistance per silicon area and lower gate charge performance. This feature makes this device ideal for use as a primary switch in advanced high-efficiency isolated DC-DC converters. By providing low RDS(on), Ciss and Cross along with guaranteed avalanche capability these parts adopted quickly into new and existing offline power supply designs.
A MOSFET is designed as a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) explicitly to handle significant power levels. This N-Channel MOSFET is defined as a type of MOSFET in which the channel of the MOSFET is made up of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel. It is one of the prominent power semiconductor devices in the world, due to its low gate drive power, wide bandwidth. This makes it ideal for use in a wide range of applications such as in low-voltage (less than 200V) switches.
- Â Used in various power switching circuits for system miniaturization and higher efficiency.
- Â Power switch circuit of adaptor and charger
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