The SuperFET MOSFET 11N60 from Fairchild Semiconductor is the first generation of a high voltage super-junction (SJ) MOSFET series that uses charge balance technology to achieve exceptional low on-resistance and low gate charge performance. This approach is intended to reduce conduction loss while still delivering outstanding switching performance, DV/DT rate, and avalanche energy.
A MOSFET is designed as a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) explicitly to handle significant power levels. This N-Channel MOSFET is defined as a type of MOSFET in which the channel of the MOSFET is made up of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel. It is one of the prominent power semiconductor devices in the world, due to its low gate drive power, and wide bandwidth. This makes it ideal for use in wide range of applications such as in low-voltage (less than 200V) switches.