2SK793 N-Channel Mosfet Transistor 850V 5A
- N-Channel Mosfet
- Drain Current: 5A
- Drain Source Voltage: Â 850V
- Static Drain-Source On Resistance: <2.5Ω
- Total Power Dissipation: 150W
- Maximum Power Dissipation (Pd): 150
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 110 nS
- Drain-Source Capacitance (Cd): 190 pF
- Package: Â TO3P
IRFP250N Power Mosfet Transistor 200V 30A
2SK2645 N-Channel Mosfet Transistor 600V 9A
2SK794 N-Channel Mosfet Transistor 900V 5A
Mosfet 15R1203
- Function : 1200V, 15A
- Reverse conducting IGBT / Reverse conducting IGBT
- Package: TO-247-3 Type
- Powerful monolithic body diode with a low forward voltage
- Designed for soft commutation only
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCEsat
- easy parallel switching capability due to positive
- temperature coefficient in VCEsat
- Low EMI
2SK2765 N-Channel Mosfet Transistor 800V 7A
Mosfet 10N90
