BUZ91A N-Channel Mosfet Transistor 600V 8A
6N60C N-Channel Mosfet Transistor 600V 5.5A
4N60 N-Channel Mosfet Transistor 600V 2.6A
2SK3264 N-Channel Power Mosfet Transistor 800V 7A
IRF3205 N-Channel Power Mosfet Transistor 55V 98A
IRF730 N-Channel Power Mosfet Transistor 400V 5.5A
- N-Channel Power Mosfet
- Drain Source Voltage: 400V
- Drain Current: IDÂ = 5.5A at TCÂ = 25oC
- Static Drain-to-Source On-Resistance: RDS(on) = 1000 mΩ
- Qg Typical: 25.3Nc
- Package: TO-220AB
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Compliant to RoHS directive 2002/95/EC
60N10 N-Channel Mosfet Transistor 100V 60A
2N60 N-Channel Mosfet Transistor 600V 2A
Mosfet 100N03 SMD
- Type of Transistor: MOSFET
- Type Designator:100N03
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage:30 V
- Maximum Gate-Source Voltage:20 V
- Maximum Drain Current:100 A
- Drain-Source Capacitance:1300 pF
- Maximum Operating Junction Temperature:175 °C
- Maximum Drain-Source On-State Resistance:0.0055 Ohm
- Maximum Power Dissipation:180 W
- Package: TO220
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching
- RoHS Compliant
- High cell density for ultra-low RdsonAvalanche voltage and current are fully characterized.
IRF9530 P-Channel Power Mosfet Transistor -100V -12A
IRF530 N-Channel Power Mosfet Transistor 100V 14A
- Type Designator: IRF530
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 90 W
- Maximum Drain-Source Voltage |Vds|: 100 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 16 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 26 nC
- Drain-Source Capacitance (Cd): 900 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
- Package: TO220
