8N60 N-Channel Power Mosfet Transistor 600V 8A Big
2SK792 N-Channel Mosfet Transistor 900V 3A
Mosfet 100N03 SMD
- Type of Transistor: MOSFET
- Type Designator:100N03
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage:30 V
- Maximum Gate-Source Voltage:20 V
- Maximum Drain Current:100 A
- Drain-Source Capacitance:1300 pF
- Maximum Operating Junction Temperature:175 °C
- Maximum Drain-Source On-State Resistance:0.0055 Ohm
- Maximum Power Dissipation:180 W
- Package: TO220
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching
- RoHS Compliant
- High cell density for ultra-low RdsonAvalanche voltage and current are fully characterized.
FS5KM Power Mosfet Transistor 30V 5A
IRFP264N N-Channel Power Mosfet Transistor 250V 44A
2SK791 N-Channel Mosfet Transistor 850V 3A
LF351 Wide Bandwidth JFET Input Operational Amplifier IC
4N60 N-Channel Mosfet Transistor 600V 2.6A
40N03GP N-Channel Power Mosfet Transistor 30V 40A
IRF9540N Power Mosfet Transistor -100V -23A
9D5N20 N-Channel Mosfet Transistor 200V 9.5A
G15N60 N-Channel Power Mosfet Transistor 600V 15A
- N-Channel Power Mosfet
- Type Designator: 15N60
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 312 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Drain Current |Id|: 15 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 200 nS
- Drain-Source Capacitance (Cd): 270 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm
- Power Dissipation: 38.5W
- Package: TO-220