70N10 N-Channel Power Mosfet Transistor 100V 65A
TL071 Low Noise J-FET Single Operational Amplifier IC
- Supply Voltage Max: ±18V
- Input Voltage: ±15V
- Differential Input Voltage: ±30V
- Power Dissipation:Â 680mW
- Input Offset Voltage:Â 3mV
- Input Offset Current:Â 5pA
- Input Bias Current:Â 20pA
- Slew Rate: 16V/µs
- Package:Â DIP-8
- Low noise J-FET single operational amplifier
- Wide common-mode and differential voltage range
- Low input bias and offset current
- Output short-circuit protection
- Low harmonic distortion:0.01%
- Internal frequency compensation
IRFZ44N Power Mosfet Transistor 55V 49A
Mosfet 105N03
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 140 W
- Maximum Drain-Source Voltage |Vds|: 30 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
- Maximum Drain Current |Id|: 150 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 42 nC
- Rise Time (tr): 91 nS
- Drain-Source Capacitance (Cd): 400 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0035 Ohm
- Package:Â TO-220
IRF840 N-Channel Mosfet Transistor 500V 8A
IRFP450 Power Mosfet Transistor 500V 14A
BFW10 N-Channel FET 30V 20mA
2N60 N-Channel Mosfet Transistor 600V 2A
Mosfet 11N60 Small
- Type Designator: 11N60
- Type of Transistor: MOSFET(Big)
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage |Vds|: 650 V
- Maximum Drain Current |Id|: 11 A
- Maximum Junction Temperature (Tj): 150 °C
- Extremely low gate charge (often Qg=40nC)
- A low effective output capacitance (typical Coss.eff=95pF)
