55NF06 N-Channel Power Mosfet Transistor 60V 55A

55NF06 power MOSFETs series designed by the  STMicroelectronics’ unique “Single Feature Size™” strip-based process. These power MOSFET Transistor designed explicitly to minimize input capacitance and gate charge. This features makes this device ideal for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications. And also for applications with low gate charge driving requirements.

55NF06 N-Channel Power Mosfet Transistor is simply a three-terminal silicon device, that offers a current conduction capability of about 55A, fast switching speed. Moreover, it features low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. These power Mosfet device offers a wide range of applications in electronic ballast, and low power switching mode power appliances. These resulting transistor exhibit extremely high packing density for low on resistance. And also rugged avalanche characteristics and comparitively lower critical alignment steps. As a result, provides a remarkable manufacturing reproducibility.

A N-Channel MOSFET designed as a type of MOSFET in which the channel of the MOSFET composed of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel. This is in contrast to the other type of MOSFET, which are P-Channel MOSFETs, in which the majority of current carriers are holes. There are 2 types of N-Channel MOSFETs, enhancement-type MOSFETs and depletion-type MOSFETs.

Applications

• Switching application