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DMV1500SD Dual Diode
₹60.00 Original price was: ₹60.00.₹50.00Current price is: ₹50.00. inc. GST
- High breakdown voltage capability
- Very fast recovery diode
- Low static and peak forward voltage drop for
low dissipation - Insulated version:
- Insulated voltage = 2000 VRMS
- Capacitance = 7 pF
- Planar technology allowing high quality and best electrical characteristics
- Outstanding performance of well proven DTV
as damper and new faster Turbo 2 600V
technology as modulation - Junction to case thermal resistance Rth(j-c): 4°C/W
- Storage temperature range Tstg: -40 to +150°C
- Maximum operating junction temperature Tj: 150°C
DMV1500SD Dual Diode designed as a high voltage semiconductor device designed explicitly for horizontal deflection stage in standardand high-resolution video display with E/Wcorrection. These dual diode manufactured in TO-220I insulated package includes both the Damper diode and the Modulation diode. These DMV1500SD dual diode assembled on automated line and UL recognized. The diode designed with the internal ceramic insulation layer offers best insulating and dissipating characteristics. A Damper diode designed to reduce voltage spikes. In this DMV1500SD Dual Diode, diode is normally arranged anti-parallel [cathode to the collector, anode to emitter] across a Collector-Emitter junction of a transistor. A modulator using one or more diodes to combine a modulating signal with a carrier signal; used chiefly for low-level signaling because of inherently poor efficiency.
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A diode designed as a semiconductor device specifically acts as a one-way switch for current. It permits flow of current easily in one direction but severely restricts current from flowing in the opposite direction. The two terminals of the diode known as the anode and cathode. The most common applications of diode includes converting AC to DC, isolating signals from a supply, and mixing signals. The 2 sides of the diode doped differently. One side is the “p-side”, this features a positive charge. The opposite side reffered as the “n-side”, this has a negative charge. Thus both of these sides layered together to form what known as the “n-p junction” where they meet.

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- Bandwidth (MHz): 136/280
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