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2N2904A PNP Transistor 60V 0.6A
₹23.00 Original price was: ₹23.00.₹15.00Current price is: ₹15.00. inc. GST
- Collector-base Voltage:Â 60V
- Collector Current:Â 0.6A
- Total Power Dissipation:Â 0.6W
- Current Gain:Â 75 at 100uA at 10 V
- Transition Frequency:Â 200MHz
- Transistor Polarity: PNP
- Package:Â T0-39
2N2904A PNP Transistor 60V 0.6A designed a Bi-Polar PNP Transistor that comes in TO-39 package at 0.6 A Continuous Collector Current. This 3 layer PNP transistors designed for use in the power audio, disk head positioners, switching and other linear applications. The collector current IC is a function of the base current IB. Any change in the base current cause corresponding amplified change in collector current for a given collector emitter voltage VCE.
Transistors defined as the most critical device in electronics circuit. An PNP transistor consists of N-type silicon (the base) material sandwiched between two pieces of P-type (collector and emitter). These transistor used specifically to pass holes from the emitter to the collector (so conventional current flows from collector to emitter). The emitter “emits” holes into the base, which controls the number of holes the emitter emits. In the base, these holes combine with the electrones and is fed to the collector. Most of the electrones emitted “collected” by the collector, which sends them along to the next part of the circuit.
The function of the PNP transistor is to amplify weak signals as they reach the base and produce strong amplified signals at the collector end. The migration of holes in a PNP transistor is from the emitter to the collector region, causing current to flow through the transistor. Because the bulk of charge carriers in such transistors are holes, they have a higher mobility than electrons and are commonly utilised in circuits. The emitter, collector, and base of a PNP transistor are the three terminals. The centre part of a PNP transistor is weakly doped, and it is the most critical factor in the transistor’s operation. Meanwhile, the emitter was little doped, whereas the collector was extensively doped.

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