Mosfet 10N90 Big
- Type Designator: 10N90
- Type of Transistor: MOSFET(Big)
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 183 W
- Maximum Drain-Source Voltage |Vds|: 900 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 10 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 54 nS
- Drain-Source Capacitance (Cd): 245 pF
- Maximum Drain-Source On-State Resistance (Rds): 1.15 Ohm
- Package: TO-247 TO-3P
Ampere Meter 10A AC 72mm Square
Ampere Meter 72mm Square15A AC
Ampere Meter 72mm Square 20A AC
Ampere Meter 72mm 30A Square
IRFP9240 P-Channel Power Mosfet Transistor -200V -12A
- P-Channel Power Mosfet
- Drain Current: ID= -12A at TC=25℃
- Drain Source Voltage: VDSÂ = -200V
- Static Drain-Source On-Resistance: RDS(on) < 500mΩ
- Power Dissipation: 150W
- Package: TO-247AC
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Lead (Pb)-free Available
TOP261YN Off-line Switcher IC
- Supply Voltage: -0.3-9V
- Output Voltage: 700 V
- Power: 333W
- Switching Frequency-Max: 132 kHz
- Package: TO-220-7C
- Lowest cost, lowest component count switcher solution
- Stable in discontinuous or continuous conduction mode
- Source connected tab for low EMI
- Circuit simplicity and Design Tools reduce time to market
