KBPC5010 Bridge Rectifier 50A 1000V
- Maximum recurrent peak reverse voltage: 1000V
- Maximum RMS voltage: 700V
- Maximum DC blocking voltage: 1000V
- Maximum forward voltage per diode: 1.1V
- Maximum average forward current: 50A
- Peak forward surge current (single half sine-wave): 400A
- Maximum DC reverse current
- At 25℃: 10µA
- At 125℃: 500A
- Operating temperature range: -40℃ to +150℃
- High current capability
- Â Surge overload ratings : 400 Amperes
- High Efficiency
- Low Power Loss
- Low reverse leakage current
- Electrically isolated Metal case for Maximum Heat Dissipation
- High case dielectric strength
3A Push to OFF Pushbutton Momentary Switch Large
IR LED 3mm
MOQ : 2 NOS
- Forward voltage, VF: 1.4V
- Forward Current, IF: 50mA
- Current - DC Forward (If) (Max):100mA
- Wavelength:850nm ~ 940nm
- High radiant intensity
- Peak wavelength =940nm
- 54mm Lead spacing
- High reliability.
- Low forward voltage
- Energy efficient.
- Environmentally friendly.
- Zero maintenance.
- Long life (50000 hrs to 100000 hrs).
33uf 450V Samwha DC Electrolytic Capacitor
IR LED Sensor
- Size: 5mm LED
- Wavelength: 940nm wavelength (most commonly used)
- Forward current (IF) is 100mA (normal condition) and 300mA (max.)
- 5A of surge forward current
- 24v to 1.4v of forward voltage
- Temperature : -40 to 100 ℃
- Soldering Temperature should not exceed 260 ℃
- Power Dissipation of 150mW at 25℃ (free-air temperature) or below
- Spectral bandwidth of 45nm
- Viewing angle: 30 to 40 degree
- High Reliability
- Excessive radiant intensity
- Having lead spacing of 2.54mm
- Easy to use with breadboard or perf board
IRF9640 P-Channel Power Mosfet Transistor -200V -11A
- P-Channel Power Mosfet
- Drain Current: ID= -11A at TC=25℃
- Drain Source Voltage: VDSÂ = -200V
- Static Drain-Source On-Resistance: RDS(on)=500mΩ
- Power Dissipation:Â 125W
- Package: TO-220AB
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Lead (Pb)-free Available
220uf 63V Samwha DC Electrolytic Capacitor
IRFBC40 N-Channel Power Mosfet Transistor 600V 2A
- N-Channel Power Mosfet
- Drain Current: 2A
- Drain Source Voltage: 600V
- Static Drain-Source On-Resistance: <1.2Ω
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
- Total Power Dissipation: 125W
- Package: TO-220
11N80 Mosfet 800V 11A
BF421 PNP Transistor -300V -500mA
15nf 2000V DC Polyester Capacitor
- Capacitance: 15nf
- Voltage Rating DC: 2000 V
- Tolerance: +/-5%
- Mounting: THT
- Leakage Current: 3 uA
- Dimensions:31*6*2.5 mm
- Operating Temperature: -40~85 C
- Lead Spacing: 7mm
- Lead Diameter : 0.5mm
- Non-inductive, epoxy DIP coated, high moisture resistance.
- The dissipation factor is normally low and it is stable against high frequency and change of temperature.
- Recommended for high-frequency circuits like an s-curve compensating circuit.
- High reliability because of its excellent Self-Healing performance
