100uf 63V Samsung DC Electrolytic Capacitor
12.5uf 250V DC Axial Capacitor
15000uf 63V Samwha DC Electrolytic Capacitor
TOP245YN Off-line Switcher IC
BC639 NPN Transistor 80V 1A
MOQ: 2 nos
- Collector-base Voltage:Â 80V
- Collector Current:Â 1A
- Transistor Polarity:Â NPN
- Total Power Dissipation:Â 1W
- Transition Frequency:Â 200MHz
- Current Gain Min. :Â 40
- Package: T0-92
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
- High power and current handling capability
G15N60 N-Channel Power Mosfet Transistor 600V 15A
- N-Channel Power Mosfet
- Type Designator: 15N60
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 312 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Drain Current |Id|: 15 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 200 nS
- Drain-Source Capacitance (Cd): 270 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm
- Power Dissipation: 38.5W
- Package: TO-220
9N80 N-Channel Power Mosfet Transistor 800V 9A
- N-Channel Power Mosfet
- Type Designator: 9N80
- Maximum Power Dissipation (Pd): 147W
- Maximum Drain-Source Voltage |Vds|: 800 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 9 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 37 nS
- Drain-Source Capacitance (Cd): 195 pF
- Maximum Drain-Source On-State Resistance (Rds): 1.05 Ohm
- Power Dissipation: 49W
- Package: TO-220F
4N80 N-Channel Mosfet Transistor 800V 4A
- Designator: 4N80
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 106 W
- Maximum Drain-Source Voltage |Vds|: 800 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 4 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 45 nS
- Drain-Source Capacitance (Cd): 75 pF
- Maximum Drain-Source On-State Resistance (Rds): 2.3 Ohm
- Package: TO-220
3N60 N-Channel Mosfet Transistor 600V 3A
- Type Designator: 8N60
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 75
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 3 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 30 nS
- Drain-Source Capacitance (Cd): 50 pF
- Maximum Drain-Source On-State Resistance (Rds): 2.8 Ohm
- Package: Â TO-220F
40T03GP N-Channel Power Mosfet Transistor 30V 28A
2N5298 NPN Transistor 80V 4A
- Collector-base Voltage:Â 80V
- Collector Current:Â 4A
- Transistor Polarity:Â NPN
- Total Power Dissipation:Â 36W
- Current Gain min.:Â 20
- Transition Frequency: 800kHz
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
- High power and current handling capability
- Package:Â T0-220
