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Mosfet 10N90

60.00 inc. GST
  • 10A,900V, RDS(on) = 1.35Ω @VGS = 10 V
  • Low gate charge ( typical 127 nC)
  • Low Crss ( typical 10 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability 1.5 V/ns

Mosfet 10N90 Big

120.00 inc. GST
  • Type Designator: 10N90
  • Type of Transistor: MOSFET(Big)
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 183 W
  • Maximum Drain-Source Voltage |Vds|: 900 V
  • Maximum Gate-Source Voltage |Vgs|: 30 V
  • Maximum Drain Current |Id|: 10 A
  • Maximum Junction Temperature (Tj): 150 °C
  • Rise Time (tr): 54 nS
  • Drain-Source Capacitance (Cd): 245 pF
  • Maximum Drain-Source On-State Resistance (Rds): 1.15 Ohm
  • Package: TO-247 TO-3P