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Mosfet 12N60

45.00 inc. GST
  • 12N60 is the type designation.
  • MOSFET is the transistor type used in the 12N60.
  • N-Channel is the type of control channel.
  • W: 225 Maximum power dissipation (Pd)
  • |Uds| maximum drain-source voltage, V: 600
  • Maximum drain current |Id|, A: 12 Maximum gate-source voltage |Ugs|, V: 30
  • Maximum junction temperature (Tj), in degrees Celsius: 150
  • 12N60 transistor rise time (tr), nS: 115
  • Capacitance at the drain (Cd), pF: 200
  • Maximum on-state drain-source resistance (Rds), Ohm: 0.6