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4N80 N-Channel Mosfet Transistor 800V 4A

50.00 inc. GST
  • Designator: 4N80
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 106 W
  • Maximum Drain-Source Voltage |Vds|: 800 V
  • Maximum Gate-Source Voltage |Vgs|: 30 V
  • Maximum Drain Current |Id|: 4 A
  • Maximum Junction Temperature (Tj): 150 °C
  • Rise Time (tr): 45 nS
  • Drain-Source Capacitance (Cd): 75 pF
  • Maximum Drain-Source On-State Resistance (Rds): 2.3 Ohm
  • Package: TO-220