Diode
IN4007 Diode
1N5819 Schottky Diode
IN5408 Diode
UF4007 Diode
- Maximum Recurrent Peak Reverse Voltage - 1000 V
- Maximum Average Forward Output Current - 1 A
- Maximum Forward Voltage Drop per element at 1.0A DC - 1.7 V
- Maximum reverse recovery time - 75 ns
- Typical Junction Capacitance 15 pF
- Package - DO-41
- Operating and Storage Temperature Range: -55...+125 °C
- Weight 0.33 grams
BY399 Fast Recovery Rectifier Diode
- Maximum Repetitive Reverse Voltage, VRRM: 800V
- Average Rectified Forward Current at TA = 500C, IO: 3A
- Peak Surge Forward Current, IFSM: 100A
- Fast recovery diodes
- Diffused junction
- High surge capability
- The plastic material carries U/L recognition 94V-0
- Low forward voltage drop
- High current capability
- High reliability
- High surge current capability
IN5822 Power Schottky Rectifier Diode
- Maximum Repetitive Reverse Voltage, VRRM: 40V
- Average Rectified Forward Current at TLÂ = 95oC, IO: 3A
- Peak Surge Forward Current, IFSM: 80A
- Guardring for overvoltage protection
- Very small conduction losses
- Extremely fast switching
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
IN6A4 Diode
SR360 Schottky Barrier Rectifier Diode
- Maximum Repetitive Reverse Voltage, VRRM: 60V
- Average Rectified Forward Current, IO: 5A
- Peak Surge Forward Current, IFSM: 150A
- Guarding for overvoltage protection
- Extremely fast switching
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
RH1 Diode
UF5408 Diode
- Maximum repetitive peak reverse voltage VRRM: 1000V
- Maximum RMS voltage VRMS:Â 700V
- Maximum DC blocking voltage VDC: 1000V
- Maximum average forward rectified current, 0.375" (9.5 mm) lead length at TA= 55°C, IF(AV) = 3.0V
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Diffused Junction
-
 Low Forward Voltage Drop
-
High Current Capability
-
High Reliability
-
High Surge Current Capability
