Diode
IN5408 Diode
BY127 Diode
IN4007 Diode
UF4007 Diode
- Maximum Recurrent Peak Reverse Voltage - 1000 V
- Maximum Average Forward Output Current - 1 A
- Maximum Forward Voltage Drop per element at 1.0A DC - 1.7 V
- Maximum reverse recovery time - 75 ns
- Typical Junction Capacitance 15 pF
- Package - DO-41
- Operating and Storage Temperature Range: -55...+125 °C
- Weight 0.33 grams
1N5819 Schottky Diode
SB560 Schottky Barrier Rectifier Diode
- Maximum Repetitive Reverse Voltage, VRRM: 60V
- Average Rectified Forward Current, IO: 5A
- Peak Surge Forward Current, IFSM: 150A
- Guarding for overvoltage protection
- Extremely fast switching
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
UF5408 Diode
- Maximum repetitive peak reverse voltage VRRM: 1000V
- Maximum RMS voltage VRMS:Â 700V
- Maximum DC blocking voltage VDC: 1000V
- Maximum average forward rectified current, 0.375" (9.5 mm) lead length at TA= 55°C, IF(AV) = 3.0V
-
Diffused Junction
-
 Low Forward Voltage Drop
-
High Current Capability
-
High Reliability
-
High Surge Current Capability
MUR480 Diode-Ultra Fast Recovery Rectifier
SR360 Schottky Barrier Rectifier Diode
- Maximum Repetitive Reverse Voltage, VRRM: 60V
- Average Rectified Forward Current, IO: 5A
- Peak Surge Forward Current, IFSM: 150A
- Guarding for overvoltage protection
- Extremely fast switching
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
MBR10100 Dual Diode 10A 100V
- Maximum repetitive peak reverse voltage VRRM: 100V
- Working peak reverse voltage VRWM: 100V
- Maximum DC blocking voltage VDC: 100V
- Voltage rate of change (rated VR) dV/dt = 10 000 V/µs
- Guard–Ring for Stress Protection
- Â Low Forward Voltage
- 150°C Operating Junction Temperature
- Â Guaranteed Reverse Avalanche
-  Epoxy Meets UL94, VO at 1/8″
- Â Low Power Loss/High Efficiency
- High Surge Capacity
- Â Low Stored Charge Majority Carrier Conduction
MBR3045 Dual Diode
- Maximum recurrent peak reverse voltage VRRM: 45V
- Maximum RMS Voltage VRMS: 31.5V
- Maximum DC blocking voltage VDC: 45V
- Power pack
- Guarding for overvoltage protection
- Lower power losses, high efficiency
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder dip 275 °C max., 10 s, per JESD 22-B106
BY399 Fast Recovery Rectifier Diode
- Maximum Repetitive Reverse Voltage, VRRM: 800V
- Average Rectified Forward Current at TA = 500C, IO: 3A
- Peak Surge Forward Current, IFSM: 100A
- Fast recovery diodes
- Diffused junction
- High surge capability
- The plastic material carries U/L recognition 94V-0
- Low forward voltage drop
- High current capability
- High reliability
- High surge current capability