2SK903 N-Channel Power Mosfet Transistor 800V 3A
2SK954 N-Channel Power Mosfet Transistor 800V 3A
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 100 W
- Maximum Drain-Source Voltage |Vds|: 800 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 3 A
- Maximum Junction Temperature (Tj): 150 °C
- Turn-on Time (ton): 60 nS
- Drain-Source Capacitance (Cd): 90 p
- Maximum Drain-Source On-State Resistance (Rds): 4 Ohm
- Package:Â TO3P
