6NK90 N-Channel Power Mosfet Transistor 900V 5.8A
70N10 N-Channel Power Mosfet Transistor 100V 65A
7N80 N-Channel Mosfet Transistor 800V 6.6A
7N90 N-Channel Power Mosfet Transistor 900V 7A
85T03GP N-Channel Power Mosfet Transistor 30V 75A
8N60 N-Channel Power Mosfet Transistor 600V 7.5A
- N-Channel Power Mosfet
- Ultra low gate charge ( typical 28 nC )
- Low reverse transfer capacitance ( Crss = typical 12.0 pF )
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- Drain Current: ID= 7.5A at TC= 25℃
- Drain Source Voltage: VDSSÂ = 600V
- Static Drain-Source On-Resistance: RDS(on) < 1.2Ω
- Package: TO-220F
8N60 N-Channel Power Mosfet Transistor 600V 8A Big
90NF03L N-Channel Power Mosfet Transistor 30V 90A
- N-Channel Power Mosfet
- Typical RDS(on): 0.0056Ω
- Typical Qg: 35 nC at 5V
- Drain-source Voltage: VDSSÂ = 30 V
- Gate- source Voltage: VGS = ±20 V
- Drain Current: IDÂ = 90 A at TCÂ = 250C
- Pulsed drain current: 360A
- Total dissipation at 25℃: 150W
- Operating temperature: -65℃ to 175℃
- Package: TO-220
9D5N20 N-Channel Mosfet Transistor 200V 9.5A
9N60 N-Channel Mosfet Transistor 600V 9A
9N80 N-Channel Power Mosfet Transistor 800V 9A
- N-Channel Power Mosfet
- Type Designator: 9N80
- Maximum Power Dissipation (Pd): 147W
- Maximum Drain-Source Voltage |Vds|: 800 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Drain Current |Id|: 9 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 37 nS
- Drain-Source Capacitance (Cd): 195 pF
- Maximum Drain-Source On-State Resistance (Rds): 1.05 Ohm
- Power Dissipation: 49W
- Package: TO-220F
