MBR10100 Dual Diode 10A 100V
- Maximum repetitive peak reverse voltage VRRM: 100V
- Working peak reverse voltage VRWM: 100V
- Maximum DC blocking voltage VDC: 100V
- Voltage rate of change (rated VR) dV/dt = 10 000 V/µs
- Guard–Ring for Stress Protection
- Â Low Forward Voltage
- 150°C Operating Junction Temperature
- Â Guaranteed Reverse Avalanche
-  Epoxy Meets UL94, VO at 1/8″
- Â Low Power Loss/High Efficiency
- High Surge Capacity
- Â Low Stored Charge Majority Carrier Conduction
SB560 Schottky Barrier Rectifier Diode
- Maximum Repetitive Reverse Voltage, VRRM: 60V
- Average Rectified Forward Current, IO: 5A
- Peak Surge Forward Current, IFSM: 150A
- Guarding for overvoltage protection
- Extremely fast switching
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106