20N60 Field Stop IGBT 600V 20A

The 20N60 Field Stop IGBT 600V 20A IGBT is manufactured in a through-hole TO-3PF package. 20N60 IGBT features low switching losses, high energy efficiency and high current capability for switching applications. The 20N60 is designed as an advanced high voltage MOSFET process explicitly to deliver high levels of performance. And also robustness in popular AC-DC applications. It provides a Collector to Emitter voltage of 600V and a continuous collector current of 20A.  It also provides a low collector-emitter saturation voltage of 2.2V and low switching losses.

All the IGBT under this series features novel field-stop IGBT technology, ON Semiconductor’s new series of field-stop IGBTs offers the optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential. As a result, offers very low switching loss and low saturation voltage making it perfect for use in low voltage switching driver designs. Thereby providing comparatively high efficiency for its switching range. By providing low RDS(on), Ciss and Cross along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

IGBT refers to an insulated-gate bipolar transistor designed with an insulated gate terminal. The IGBT is integrated into a single device, a control input with a MOS structure, and a bipolar power transistor that functions as an output switch.  This IGBT is co-packaged with a soft recovery ultra-fast rectifier and also uses an advanced termination scheme. Therefore, provide an enhanced and reliable high voltage–blocking capability.

Applications:

• Inverters, SMPS, PFC, UPS
• welding converters
• converters with the high switching frequency
• Automotive Chargers, Converters, High Voltage Auxiliaries