2SK3561 N-Channel Mosfet Transistor 500V 8A

These 2SK3561 N-Channel enhancement mode power field-effect transistors designed based on Silicon N Channel MOS Type. 2SK3561 is simply a three-terminal silicon device with, high-speed high current switching applications. These devices are compatible for high-efficiency switching DC/DC converters, switch-mode power supplies, also active power supply correction, electronic lamp ballast-based n half-bridge topology . Moreover, 2SK3561 feature minimum Lot-to-Lot variations for robust device performance and reliable operation.

2SK3561 N-Channel Mosfet Transistor manufactured in TO-220 package that is universally accepted for all commercial-industrial applications. 2SK3561 provides a Drain Source Voltage of 500V at a drain current 8A. These MOSFET Transistors designed explicitly to achieve extremely low on-resistance per silicon area and lower gate charge performance. This feature makes this device ideal for use as a primary switch in advanced high-efficiency isolated DC-DC converters.

A MOSFET designed as a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) explicitly to handle significant power levels. This N-Channel MOSFET defined as a type of MOSFET in which the channel of the MOSFET made up of a majority of electrons as current carriers. When the MOSFET activated and is on, the majority of the current flowing are electrons moving through the channel. It is one of the prominent power semiconductor device in world, due to its low gate drive power, wide bandwidth. This makes it ideal for use in  wide range of applications such as in low-voltage (less than 200V) switch.