30N60 IGBT 600V 30A

The 30N60 designed as a 600V, 30A IGBT manufactured in a through-hole TO-247-3-21 package. 30N60 IGBT features low switching losses, high energy efficiency and high avalanche ruggedness for soft switching applications. The 30N60 defined as a high voltage IGBT with a Collector to Emitter voltage of 600V and continuous collector current of 30A.  It also provides a low collector-emitter saturation voltage of 2.1V and low switching losses. All the IGBT under this series features Non-Punch Though (NPT) Technology. As a result, offers very low switching loss and low saturation voltage making it perfect for use in low voltage switching driver designs with comparatively high efficiency for its switching range.

The current rating of this IGBT is indicated after the prefix SGP. For example, the 30N60 IGBT is rated for 30A Collector current at 125°C. The number 60 indicates that the IGBT has a collector emitter voltage of 600V. Moreover, the 30N60 IGBTs offers extended avalanche capability that is the IGBTs are immune to stray inductance problems. Even when the Collector Emitter voltage exceeds the rated voltage they do not breakdown because of this property. Hence this IGBT widely used in rugged switching designs. Like all IGBT’s, this 30N60 suffers from low switching speed and the high voltage drop across the collector and emitter compared with MOSFETs. So incase if you need an high efficiency and faster switching device then you should prefer MOSFETs over IGBT.

IGBT refers to an insulated-gate bipolar transistor which is a bipolar transistor with an insulated gate terminal. The IGBT integrated into a single device, a control input with a MOS structure and a bipolar power transistor that function as an output switch. 

Applications

• Motor controls
• Inverters
• Household devices