BC636 PNP Transistor -45V -1A

20.00 inc. GST

MOQ: 2 nos

  • Collector-base Voltage: -45V
  • Collector Current: -1A
  • Transistor Polarity: PNP
  • Total Power Dissipation: 1W
  • Transition Frequency: 100MHz
  • Current Gain Min. : 40
  • Package: T0-92
Description

The BC636 designed as a small single PNP Transistor manufactured in TO-92 metal can package. The BC636 is a low signal PNP with low noise operations that makes it popular in signal processing circuits and television receivers. BC636 is a semiconductor device that is used to enhance or switch electronic signals and electrical power. This semiconductor material has at least three terminals for external circuit connection. The current flowing through one set of transistor terminals is controlled by a voltage or current provided to another set of terminals. A transistor can magnify a signal if the regulated (output) power is greater than the controlling (input) power.

In electrical circuits, transistors are the most critical component. A PNP transistor is made up of two pieces of N-type silicon (the base) sandwiched between two pieces of P-type silicon (collector and emitter). The main purpose of these transistors was to transfer holes from the emitter to the collector (so conventional current flows from collector to emitter). The emitter “emits” holes into the base, and the base controls the number of holes the emitter emits. These holes combine with the electrones in the base to reach the collector. The collector “collects” and sends the bulk of the liberated electrons to the next section of the circuit.

The function of the PNP transistor is to amplify weak signals as they reach the base and create powerful amplified signals at the collector end. The migration of holes in a PNP transistor is from the emitter to the collector area, causing current to flow through the transistor. Because the bulk of charge carriers in such transistors are holes, they are commonly employed in circuits. As a result, compared to electrones, it has a high mobility.

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