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ULN2804 8-Channel Darlington Sink Driver IC
ULN2804 8-Channel Darlington Sink Driver IC Original price was: ₹34.00.Current price is: ₹30.00. inc. GST

BF494 NPN Transistor 30V 0.03A

Original price was: ₹10.00.Current price is: ₹5.00. inc. GST

  • Collector-base Voltage: 30V
  • Collector Current: 0.03A
  • Transistor Polarity: NPN
  • Total Power Dissipation: 0.5W
  • Current Gain max. : 220
  • Package: T0-92
Description

The BF494  designed as an NPN Medium Frequency transistor used in low voltage low current applications. At IC=1mA and VCE=10V, this IC has a gain of 67 to 220 with a transition frequency of 120MHz. Radio and television receivers, FM tuners, Low noise AM, mixer-oscillators, and IF amplifiers in AM/FM receivers are all examples of uses. BF494 provides a maximum collector current of 30mA,  so make sure you do not cross it and fry your transistor.

The most crucial component in an electrical circuit is the transistor. Two pieces of P-type silicon (the base) are placed between two pieces of N-type silicon in an NPN transistor (the collector and emitter). The main purpose of these transistors was to transport electrons from the emitter to the collector (so conventional current flows from collector to emitter). The emitter “emits” electrons into the base, and the base controls the amount of electrons the emitter emits. These electrons are transferred to the collector after mixing with the holes in the base. The collector “collects” and sends the bulk of the liberated electrons to the next section of the circuit.

The NPN transistor’s goal is to amplify weak signals entering the base and generate powerful amplify impulses at the collector end. In an NPN transistor, an electron travels from the emitter to the collector region, causing current to flow through the transistor. They are often used in circuits because the majority of charge carriers in such transistors are electrons, which have a higher mobility than holes. The three terminals of an NPN transistor are the emitter, collector, and base. The weakly doped centre of an NPN transistor is the most important aspect of the transistor’s functioning. The emitter, on the other hand, was just lightly doped, but the collector was heavily doped.

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