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CD4038BE CMOS Triple Serial Adder IC
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IR2153 Self-Oscillating Half-Bridge Driver IC

Original price was: ₹150.00.Current price is: ₹90.00. inc. GST

  • Self-Oscillating Half-Bridge Driver
  • High Side Floating Supply Voltage Max.: 625V
  • Supply current Max.: 5mA
  • Clamp Voltage Max.: 16.8V
  • High level output voltage Max.: 100mV
  • Low level output voltage Max.: 100mV
  • Total Power Dissipation: 1W
  • Oscillator frequency Max.: 106kHz
  • Rise Time Max. : 150ns
  • Fall Time Max.: 100ns
  • Integrated 600V half-bridge gate driver
  • 15.6V zener clamp on Vcc • True micropower start up
  • Tighter initial deadtime control
  • Low temperature coefficient deadtime
  • Shutdown feature (1/6th Vcc) on CT pin
  • Increased undervoltage lockout Hysteresis (1V)
  • Lower power level-shifting circuit
  • Constant LO, HO pulse widths at startup
  • Lower di/dt gate driver for better noise immunity
  • Low side output in phase with RT
  • Internal 50nsec (typ.) bootstrap diode (IR2153D)
  • Excellent latch immunity on all inputs and outputs
  • ESD protection on all leads
  • Also available LEAD-FREE
  • Package: DIP-8
Description

IR2153 designed as a self-oscillating 600V half-bridge IGBT and MOSFET driver IC offering  a typical 0A source and 0A sink current. The IR2153 comes as an improved version of the popular IR2155 and IR2151 gate driver ICs. It comprises of high voltage half-bridge gate driver with  front end oscillator identical to industry-standard CMOS 555 timer. The IR2153 ensures more functionality and is quite easier to use than previous ICs. Moreover, a shutdown feature designed in the IC into the CT pin. So using a low voltage control signal both gate driver outputs made disabled.

Furthermore, the gate driver output pulse widths remains the same once the rising Undervoltage lockout threshold on VCC reached. Thereby resulting in a more stable profile of frequency vs time at startup. Meanwhile, the Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special care need to taken to maximize the latch immunity of the device. And  thus providing comprehensive ESD protection on all pins.

The Half-Bridge Driver IC employed to drive the gates of high- and low-side N-channel MOSFETs (or IGBTs) with a low output impedance to reduce the conduction losses, and a fast switching time to reduce the switching losses. The high-and low-side drivers requires very close matching of the timing characteristics.  Thus allow accurate and efficient switching of the device. This minimises the deadtime from one switch of the half-bridge turning off before the second switch turns on. Isolated half-bridge gate drivers widely utilized in many applications that range from isolated dc-to-dc power supply modules where high power density and efficiency are necessary, to solar inverters where high isolation voltage and long-term reliability are mandatory.

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